^zml-tonauctoi u^i , lf nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor MJE18006 description ? collector-base breakdown voltage- :v(br)cbo=1000v(min) ? high switching speed applications ? designed for use in 220v line-operated switchmode power supplies and electronic light ballasts absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib ibm pd tj tsig parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current -continuous collector current-peak base current base current-peak total power dissipation@tc=25c junction temperature storage temperature value 1000 450 9 6 15 4 8 100 150 -65-150 unit v v v a a a a w 'c 'c thermal characteristics symbol rth j-c rth j-a parameter thermal rresistance, junction to case thermal resistance, junction to ambient max 1.25 62.5 unit 'c/w "cm/ 1 2 3 pin 1.base 2.collector 3.bwiitter to-220c package b >-\j wf^ k i aoi-.i j=3 dim a b c d f g h j k l 0 r s u v mm miu win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJE18006 electrical characteristics tj=25 c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat)-1 vbe(sat)-2 ices iceo iebo hpe-1 hpe-2 hfe-3 hfe-4 fr cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc=0,1a;l=25mh ic=1-5a;ib=0.15a tc=125"c lo=3a;lb=0.6a tc=125'c lc= 1.5a; ib=0.15a lc= 3a; ib= 0.6a vces=ratedvces; veb= 0 tc=125'c vces=800vtc=125'c vce= ratedvceo; ln=0 veb= 9v; lc=0 lc= 0.5a ; vce= 5v lc=3a;vce=1v ic=1.5a;vce=1v lc=10ma;vce=5v lc= 0.5a; vce=10v; ftes,=1.0mhz le=0;vcb=10v;ftes,=1.0mhz min 450 14 6 11 10 typ 14 75 max 0.6 0.65 0.7 0.8 1.2 1.3 0.1 0.5 0.1 0.1 0.1 34 unit v v v v v ma ma ma mhz pf switching times resistive load.duty cycle's 10%,pulse width=20 u s ton toff ton toff turn-on time turn-off time turn-on time turn-off time vcc= 300v ,lc= 3a ib1=0.6a;ib2=1.5a vcc=300v,lc=1.3a ib1=0.13a; ib2=0.65a 90 1.7 0.2 1.2 180 2.5 0.3 2.5 ns u s u s us
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